the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all products and/or types are available in every country. please check with an nec electronics sales representative for availability and additional information. mos field effect transistor pa1930 p-channel mosfet for switching data sheet document no. g18030ej1v0ds00 (1st edition) date published april 2006 ns cp(k) printed in japan 2006 description the pa1930 is a p-channel mosfet designed for power switch of portable machine and so on. features ? 4.5 v drive available r ds(on)1 = 77 m max. (v gs = ? 10 v, i d = ? 2.5 a) r ds(on)2 = 100 m max. (v gs = ? 4.5 v, i d = ? 2.5 a) ordering information part number package pa1930te-t1-a pa1930te-t2-a sc-95 (mini mold thin type) remark "-a" indicates pb-free (t his product does not contain pb in external electrode and other parts). "-t1", "-t2" indicates the unit orientation (8 mm embossed carrier tape, 3,000 pcs/reel). marking : ua absolute maximum ratings (t a = 25c) drain to source voltage (v gs = 0v) v dss ? 30 v gate to source voltage (v ds = 0v) v gss m 20 v drain current (dc) note1 i d(dc) m 4.5 a drain current (pulse) note2 i d(pulse) m 18 a total power dissipation p t1 0.2 w total power dissipation note1 p t2 2.0 w channel temperature t ch 150 c storage temperature t stg ? 55 to +150 c notes 1. mounted on fr-4 board 2500 mm 2 1.6 mm, t 5 sec 2. pw 10 s, duty cycle 1% remark the diode connected between the gate and source of the transi stor serves as a protector against esd. when this device actually used, an additional prot ection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. caution this product is electrostatic-sensitiv e device due to low esd capability and shou ld be handled with caution for electrostatic discharge. v esd 150 v typ. (c = 200 pf, r = 0 , single pulse) package drawing (unit : mm) 0.65 0.9 to 1.1 0 to 0.1 0.16 +0.1 ?0.06 2.8 0.2 1.5 0.95 123 654 1.9 2.9 0.2 0.32 +0.1 ?0.05 0.95 0.65 +0.1 ?0.15 1 , 2, 5, 6 : drain 3 : gate 4 : source equivalent circuit source body diode gate protection diode gate drain
data sheet g18030ej1v0ds 2 pa1930 electrical characteristics (t a = 25c) characteristics symbol test conditions min. typ. max. unit zero gate voltage drain current i dss v ds = ? 30 v, v gs = 0 v ? 1 a gate leakage current i gss v gs = m 16 v, v ds = 0 v m 10 a gate to source cut-off voltage v gs(off) v ds = ? 10 v, i d = ? 1.0 ma ? 1.0 ? 2.5 v forward transfer admittance note | y fs | v ds = ? 10 v, i d = ? 2.5 a 1 s drain to source on-state resistance note r ds(on)1 v gs = ? 10 v, i d = ? 2.5 a 58 77 m r ds(on)2 v gs = ? 4.5 v, i d = ? 2.5 a 77 100 m input capacitance c iss v ds = ? 10 v 325 pf output capacitance c oss v gs = 0 v 78 pf reverse transfer capacitance c rss f = 1.0 mhz 65 pf turn-on delay time t d(on) v dd = ? 15 v, i d = ? 2.5 a, 8.5 ns rise time t r v gs = ? 10 v, 3.5 ns turn-off delay time t d(off) r g = 6 33 ns fall time t f 19.5 ns total gate charge q g v dd = ? 24 v, 7.5 nc gate to source charge q gs v gs = ? 10 v, 1.1 nc gate to drain charge q gd i d = ? 4.5 a 2.3 nc diode forward voltage note v f(s-d) i f = 4.5 a, v gs = 0 v 0.93 v note pulsed test circuit 2 gate charge test circuit 1 switching time pg. r g 0 v gs ( ? ) d.u.t. r l v dd = 1 s duty cycle 1% pg. 50 d.u.t. r l v dd i g = ? 2 ma v gs wave form v ds wave form v gs( ? ) v ds( ? ) 10 % 0 0 90 % 90 % 90 % v gs v ds t on t off t d(on) t r t d(off) t f 10 %10 %
data sheet g18030ej1v0ds 3 pa1930 typical characteristics (t a = 25c) derating factor of forward bias safe operating area total power dissipation vs. ambient temperature dt - percentage of rated power - % 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 t a - ambient temperature - c p t - total power dissipation - w 0.0 0.5 1.0 1.5 2.0 2.5 0 25 50 75 100 125 150 175 mounted on fr-4 board of 2500 mm 2 1.6 mm t < 5sec t a - ambient temperature - c forward bias safe operating area i d - drain current - a -0.01 -0.1 -1 -10 -100 -0.1 -1 -10 -100 100 ms 10 ms i d(pulse) i d(dc) 1 ms r ds(on) limited (v gs = ? 10 v) single pulse mounted on fr-4 board of 2500 mm 2 1.6 mm 5 s pw= 100 s v ds - drain to source voltage - v transient thermal resistance vs. pulse width r th(ch-a) - transient thermal resistance - c/w 0.1 1 10 100 1000 single pulse mounted on fr-4 board of 2500 mm 2 1.6 mm pw - pulse width ? s 100 1 m 10 m 100 m 1 10 100 1000
data sheet g18030ej1v0ds 4 pa1930 drain current vs. drain to source voltage forward transfer characteristics i d - drain current - a 0 -4 -8 -12 -16 -20 0 -1-2-3-4 pulsed ? 4.5 v v gs = ? 10 v v ds - drain to source voltage - v i d - drain current - a -0.0001 -0.001 -0.01 -0.1 -1 -10 -0.5 -1 -1.5 -2 -2.5 -3 -3.5 t a = 125 c 75 c 25 c ? 25 c v ds = ? 10 v pu ls e d v gs - gate to source voltage - v gate cut-off voltage vs. channel temperature forward transfer admittance vs. drain current v gs(off) - gate cut-off voltage - v -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -50 0 50 100 150 v ds = ? 10 v i d = ? 1.0 ma t ch - channel temperature - c | y fs | - forward transfer admittance - s 0.01 0.1 1 10 -0.01 -0.1 -1 -10 t a = ? 25 c 25 c 75 c 125 c v ds = ? 10 v pu ls e d i d - drain current - a drain to source on-state resistance vs. drain current drain to source on-state resistance vs. drain current r ds(on) - drain to source on-state resistance - m 0 50 100 150 200 -0.1 -1 -10 -100 v gs = ? 10 v pu ls e d t a = 125 c 75 c 25 c ? 25 c i d - drain current - a r ds(on) - drain to source on-state resistance - m 0 50 100 150 200 -0.1 -1 -10 -100 v gs = ? 4.5 v pulsed t a = 125c 75c 25c ? 25c i d - drain current - a
data sheet g18030ej1v0ds 5 pa1930 drain to source on-state resistance vs. channel temperature drain to source on-state resistance vs. gate to source voltage r ds(on) - drain to source on-state resistance - m 0 50 100 150 200 -50 0 50 100 150 v gs = -4.5 v -10.0 v i d = ? 2.5 a pu ls e d v gs = ? 4.5 v ? 10 v t ch - channel temperature - c r ds(on) - drain to source on-state resistance - m 0 50 100 150 200 0 -4 -8 -12 -16 -20 i d = ? 2.5 a pulsed v gs - gate to source voltage - v capacitance vs. drain to source voltage switching characteristics c iss , c oss , c rss - capacitance - pf 10 100 1000 -0.1 -1 -10 -100 v gs = 0 v f = 1.0 mhz c iss c oss c rss v ds - drain to source voltage - v t d(on) , t r , t d(off) , t f - switching time - ns 1 10 100 -0.1 -1 -10 t d(off) t d(on) t f t r v dd = ? 15 v v gs = ? 10 v r g = 6 i d - drain current - a dynamic input characteristics source to drain diode forward voltage v gs - gate to source voltage ? v 0 -2 -4 -6 -8 -10 0 -2-4-6-8 i d = ? 4.5 a v dd = ? 6.0 v ? 15 v ? 24 v q g - gate charge - nc i f - diode forward current - a 0.01 0.1 1 10 100 0.4 0.6 0.8 1.0 1.2 1.4 v gs = 0 v pu ls e d v f(s-d) - source to drain voltage - v
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